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AQZ204 - PhotoMOS RELAY

Download the AQZ204 datasheet PDF. This datasheet also covers the AQZ102 variant, as both devices belong to the same photomos relay family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. Slim SIL4-pin package (W) 3.5 × (D) 21.0 × (H) 12.5 mm (W) .138 × (D) .827 × (H) .492 inch The compact size of the 4-pin SIL package allows high density mounting. 2. Extremely low on-resistance 3. Control low-level signal Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 4. Low-level off state leakage current of max. 10 μA 5. High I/O isolation voltage of 2,500 V 6. Eliminates the need for a counter electromoti.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AQZ102-Panasonic.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AQZ204 (AQZxxx) POWER PhotoMOS RELAYS Nais
AQZ204D (AQZxxxD) POWER PhotoMOS RELAYS Nais
AQZ204V (AQZxxxV) POWER PhotoMOS RELAYS Nais
AQZ202 (AQZxxx) POWER PhotoMOS RELAYS Nais
AQZ202D (AQZxxxD) POWER PhotoMOS RELAYS Nais

Other Datasheets by Panasonic

Part Number Description
AQZ204D PhotoMOS RELAY
AQZ202 PhotoMOS RELAY
AQZ202D PhotoMOS RELAY
AQZ205 PhotoMOS RELAY
AQZ205D PhotoMOS RELAY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Slim type with high capacity up to 4A DC load type also available Power 1 Form A (AQZ10❍, 20❍) 21 .827 3.5 .138 12.5 .492 (Height includes standoff) mm inch 12 3− DC type 4+ 12 3 4 AC/DC type RoHS compliant FEATURES 1. Slim SIL4-pin package (W) 3.5 × (D) 21.0 × (H) 12.5 mm (W) .138 × (D) .827 × (H) .492 inch The compact size of the 4-pin SIL package allows high density mounting. 2. Extremely low on-resistance 3. Control low-level signal Power PhotoMOS feature extremely low closed-circuit offset voltage to enable control of low-level analog signals without distortion. 4. Low-level off state leakage current of max. 10 μA 5. High I/O isolation voltage of 2,500 V 6. Eliminates the need for a counter electromotive protection diode in the drive circuit on the input side 7.