A1499 - Silicon PNP epitaxial planar type Power Transistors
Panasonic
Key Features
q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with
one screw. s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC.
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Power Transistors
2SA1499
Silicon PNP epitaxial planar type
For high-speed switching
s Features
q High foward current transfer ratio hFE q High-speed switching q High collector to base voltage VCBO q Full-pack package which can be installed to the heat sink with
one screw.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
VCBO VCEO VEBO ICP IC
PC
–400 –400 –7 –1.2 – 0.6 25
2
Junction temperature Storage temperature
Tj 150 Tstg –55 to +150
Unit V V V A A
W
˚C ˚C
14.0±0.5 Solder Dip 4.0
16.7±0.3 7.5±0.2
0.7±0.1
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.
A1499 Datasheet
