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Power Transistors
2SC5413
Silicon NPN triple diffusion mesa type
For horizontal deflection output
s Features
q High breakdown voltage, and high reliability through the use of a glass passivation layer
q High-speed switching q Wide area of safe operation (ASO)
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1700
V
Collector to emitter voltage
VCES
1700
V
VCEO
600
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
30
A
Collector current
IC
20
A
Base current
IB
10
A
Collector power TC=25°C
dissipation
Ta=25°C
PC
200 W
3.
2SC5413 Datasheet