Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances and high efficiency with a lowvoltage power supply.
Absolute Maximum Ratings Ta = 25°C
1.9±0.1 16.0±1.0
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
40
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d tage. ued Emitter-base voltage (Collector open) VEBO
7
V
le s ntin Collector current
IC
5
A
a e cyc isco Peak colle.
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Power Transistors
2SC2594
Silicon NPN epitaxial planar type
For low-frequency power amplification/ stroboscope/converter
120°
7.5+–00..15
Unit: mm
2.9±0.2
2.3±0.2 3.8±0.3 11.0±0.5
■ Features
3.05±0.1
• Low collector-emitter saturation voltage VCE(sat)
• Satisfactory operation performances and high efficiency with a lowvoltage power supply
■ Absolute Maximum Ratings Ta = 25°C
1.9±0.1 16.0±1.0
/ Parameter
Symbol Rating
Unit
e ) Collector-base voltage (Emitter open) VCBO
40
V
c type Collector-emitter voltage (Base open) VCEO
20
V
n d tage.
2SC2594 Datasheet
