XN6212 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN6212, Silicon NPN epitaxial planer transistor

Composite Transistors XN6212 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 0.65±0.15 6 0.95 2.8 0.3 +0.2 +0.25 1.5 0.05 0.65±0.15 1 0.3 0.05 2.9 0.05 q q Two elements incorporated into one package.

(Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 5 2 0.95 4 3 s Basic Part Number of Element q 1.1 0.1 0.4±0.2 s Absolute Maximum Ratings P

XN6212 Features

* 0.5

* 0.05 +0.1 +0.1 1 Composite Transistors PT

* Ta 500 XN6212 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC

* VCE 160 100 VCE(sat)

* IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/I