XN2401 Datasheet (Panasonic Semiconductor) - Silicon PNP epitaxial planer transistor

XN2401, Silicon PNP epitaxial planer transistor

Composite Transistors XN2401 Silicon PNP epitaxial planer transistor Unit: mm For general amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Base-coupled transistors) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SB709A × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings Parameter C

XN2401 Features

* 1 Composite Transistors PT

* Ta 500 XN2401 IC

* VCE

* 60 Ta=25˚C IB=

* 300µA

* 250µA

* 40

* 200µA

* 30

* 150µA

* 60 VCE=

* 5V Ta=25˚C

* 50 IC

* I B Total power dissipation PT (mW) Collector current IC (