XN1D873 Datasheet (Panasonic Semiconductor) - Silicon N-channel junction FET

XN1D873, Silicon N-channel junction FET

Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 +0.2 s Basic Part Number of Element q 0.8 s Absolute Maximum Ratings Parameter Rating Gate to drain voltage of Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings 5

XN1D873 Features

* 1 Composite Transistors PT

* Ta 500 2.5 Ta=25˚C XN1D873 ID

* VDS 2.5 ID

* VGS Total power dissipation PT (mW) 400 2.0 2.0 VGS=0V Drain current ID (mA) Drain current ID (mA) Ta=

* 25˚C 1.5 25˚C 300 1.5

* 0.1V

* 0.2V 1.0

* 0.3V