XN1B301 Datasheet (Panasonic Semiconductor) - Silicon PNP(NPN) epitaxial planer transistor

XN1B301, Silicon PNP(NPN) epitaxial planer transistor

Composite Transistors XN1B301 Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For general amplification 0.65±0.15 2.8 -0.3 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 q s Basic Part Number of Element q 1.1 -0.1 +0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to

XN1B301 Features

* 1 Composite Transistors XN1B301 (Ta=25˚C) Symbol VCBO VCEO VEBO ICBO ICEO hFE VCE(sat) fT Cob Conditions IC =

* 10µA, IE = 0 IC =

* 2mA, IB = 0 IE =

* 10µA, IC = 0 VCB =

* 20V, IE = 0 VCE =

* 10V, IB = 0 VCE =

* 10V, IC =

* 2mA IC =

* 100mA,