XN1509 Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN1509, Silicon NPN epitaxial planer transistor

Composite Transistors XN1509 Silicon NPN epitaxial planer transistor Unit: mm For high-frequency amplification 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q 2SC4561 × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolute Maximum Ratings P

XN1509 Features

* 1 Composite Transistors PT

* Ta 240 120 Ta=25˚C XN1509 IC

* VCE 60 VCE=10V 50 25˚C Ta=75˚C 40

* 25˚C IC

* VBE Total power dissipation PT (mW) 200 100 Collector current IC (mA) 160 80 IB=300µA 250µA 200µA 150µA 100µA Collector current IC (mA) 120 60 30 8