XN121M - NPN epitaxial planer transistor

Panasonic Semiconductor

Datasheet Details

Part number	XN121M
Manufacturer	Panasonic ↗ Semiconductor
File Size	33.76 KB
Description	NPN epitaxial planer transistor
Datasheet	XN121M_PanasonicSemiconductor.pdf

1 Composite Transistors PT.
Ta 500 XN121M Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 240 10 VCE(sat).
IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25˚C IC/IB=10 500 hFE.
IC VCE=10V 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.003 0.001 25˚C 200 Collector current IC (mA) IB=1.0mA 0.9mA 0.8mA 0.7mA Forward current transfer ratio hFE 400 160 0.6mA 0.5mA 0.4mA 0.3mA 0.2mA 300 Ta=75˚C.

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Published: Apr 16, 2005 |