XN121E Datasheet (Panasonic Semiconductor) - Silicon NPN epitaxial planer transistor

XN121E, Silicon NPN epitaxial planer transistor

Composite Transistors XN121E Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package.

(Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.

1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN121E × 2 elements 0.8 s Basic Part Number of Element +0.2 s Absolu

XN121E Features

* 1 Composite Transistors PT

* Ta 500 XN121E Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC

* VCE 60 VCE(sat)

* IC 100 hFE

* IC IC/IB=10 Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 Ta=75