XN121E - Silicon NPN epitaxial planer transistor

Panasonic Semiconductor

Datasheet Details

Part number	XN121E
Manufacturer	Panasonic ↗ Semiconductor
File Size	33.94 KB
Description	Silicon NPN epitaxial planer transistor
Datasheet	XN121E_PanasonicSemiconductor.pdf

1 Composite Transistors PT.
Ta 500 XN121E Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
VCE 60 VCE(sat).
IC 100 hFE.
IC IC/IB=10 Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 Ta=75˚C 0.3 0.1 0.03 0.01 0.1 25˚C 50 Forward current transfer ratio hFE IB=1.0mA 0.7mA Ta=25˚C 0.9mA 0.6mA 0.8mA 160 VCE=10V Collector current IC (mA) 120 Ta=75˚C 25˚C.
25˚C 40 0.3mA 0.4mA.

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Published: Apr 16, 2005 |