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XN1216 - Silicon NPN epitaxial planer transistor

Features

  • 1 Composite Transistors PT.
  • Ta 500 XN1216 Total power dissipation PT (mW) 400 300 200 100 0 0 40 80 120 160 Ambient temperature Ta (˚C) IC.
  • VCE 160 VCE(sat).
  • IC 100 hFE.
  • IC IC/IB=10 400 VCE=10V Ta=25˚C 140 IB=1.0mA Collector to emitter saturation voltage VCE(sat) (V) 30 10 3 1 0.3 Ta=75˚C 0.1 0.03 0.01 0.1 25˚C Forward current transfer ratio hFE 350 Ta=75˚C 300 250.
  • 25˚C 200 150 100 50 0 25˚C Collector current IC (mA) 120 100 0.9mA.

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Datasheet Details

Part number XN1216
Manufacturer Panasonic
File Size 32.92 KB
Description Silicon NPN epitaxial planer transistor
Datasheet download datasheet XN1216 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Composite Transistors XN1216 Silicon NPN epitaxial planer transistor Unit: mm For switching/digital circuits 2.8 -0.3 0.65±0.15 +0.2 +0.25 1.5 -0.05 5 0.65±0.15 1 0.95 2.9 -0.05 q q Two elements incorporated into one package. (Emitter-coupled transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half. 1.9±0.1 +0.2 4 0.95 3 2 0.3 -0.05 0.4±0.2 0.16 -0.06 +0.1 1.1 -0.1 q UN1216 × 2 elements 0.8 s Basic Part Number of Element +0.
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