br>
200
Forward current transfer ratio hFE
30
10
3
1
0.3
0.1
0.03
0.01
1 Ta=75˚C 25˚C
25˚C
200
Collector current IC (mA)
IB=
1.2mA
160
1.0mA
0.8mA
0.6mA
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping. 6.9±0.1 0.7 4.0
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.65 max. 1.0
s Resistance by Part Number
q q q q q q
UN6121 UN6122 UN6123 UN6124 UN612X UN612Y
(R1) 2.2kΩ 4.7KΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ
0.45.
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Transistors with built-in Resistor
UN6121/6122/6123/6124/612X/612Y
Silicon PNP epitaxial planer transistor
For digital circuits
Unit: mm
0.15
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. MT-1 type package, allowing supply with the radial taping.
6.9±0.1 0.7 4.0
1.05 2.5±0.1 ±0.05 (1.45) 0.8
0.65 max.
1.0
s Resistance by Part Number
q q q q q q
UN6121 UN6122 UN6123 UN6124 UN612X UN612Y
(R1) 2.2kΩ 4.7KΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ
0.45–0.05
+0.1
1
2
3
0.45–0.05
2.5±0.5
2.5±0.5
+0.