emitter saturation voltage VCE(sat) (V)
Ta=25˚C
200
Forward current transfer ratio hFE
30
10
3
1
0.3
0.1
0.03
0.01
1 Ta=75˚C 25˚C
25˚C
200
Collector current IC (mA)
IB=
1.2mA
16
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing. 2.8.
0.3 0.65±0.15
+0.2
Unit: mm
0.65±0.15
1.5.
0.05
+0.25
0.95
2.9.
0.05
1
1.9±0.2
+0.2
0.95
3
1.45 0 to 0.1
2
s Resistance by Part Number
1.1.
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Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
s
q q
Features
Costs can be reduced through downsizing of the equipment and reduction of the number of parts. Mini type package, allowing downsizing of the equipment and automatic insertion through tape packing and magazine packing.
2.8 –0.3 0.65±0.15
+0.2
Unit: mm
0.65±0.15
1.5 –0.05
+0.25
0.95
2.9 –0.05
1
1.9±0.2
+0.2
0.95
3
1.45 0 to 0.1
2
s Resistance by Part Number
1.1 –0.1
+0.2
q q q q q q
UN2121 UN2122 UN2123 UN2124 UN212X UN212Y
Marking Symbol (R1) 7A 2.2kΩ 7B 4.7kΩ 7C 10kΩ 7D 2.2kΩ 7I 0.27kΩ 7Y 3.1kΩ
(R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ 5kΩ 4.6kΩ
0.1 to 0.3 0.4±0.2
1:Base 2:Emitter 3:Collector
0.
UN2124 Datasheet
