UN1231A Datasheet - Panasonic Semiconductor

UN1231A Silicon NPN epitaxial planer transistor

Transistors with built-in Resistor UN1231/1231A Silicon NPN epitaxial planer transistor Unit: mm 6.9±0.1 2.5±0.1 1.0 For amplification of the low frequency 0.4 1.5 1.5 R0.9 R0.9 1.0±0.1 q 0.85 0.55±0.1 0.45±0.05 s Absolute Maximum Ratings Parameter Collector to base voltage UN1231 UN1231A Symbol VCBO VCEO IC ICP PT Tj Tstg (Ta=25˚C) Ratings 20 60 20 50 0.7 1.5 1.0 150 55 to +150 Unit 3 2 1 2.5 2.5 V UN1231 Collector to emitter voltage UN1231A Collector current Peak.

UN1231A Features

* 3.5±0.1 1.0 V Forward current transfer ratio Collector to emitter saturation voltage Input resistance Resistance ratio 1 Transistors with built-in Resistor PT

* Ta 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 40 80 120 160 Copper foil area of 1cm2 or more and thickness of 1.7mm for the collecto

UN1231A Datasheet (31.66 KB)