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ON3732A - Optoisolators

Key Features

  • High collector to emitter breakdown voltage : VCEO > 300 V, A type : VCEO > 350 V High current transfer ratio with Darlington phototransistor output : CTR = 4000% (typ. ) High I/O isolation voltage : VISO ≥ 5000 Vrms Small DIL package for saving mounting space UL listed (UL File No. E79920) A-type models have a guaranteed internal insulating distance of 0.4 mm 0 5˚ to 1 0 5˚ to 1 1,3: Anodee 2,4: Cathode 5,7: Emitter 6,8: Collector CNZ3734/CNC7H501 LED Mark 1 2 3 4 5 6 7 8 7.62±0.3 6.2±0.5.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Optoisolators (Photocouplers) CNZ3731, CNC7C501, CNZ3734 CNC2S501, CNC7C502, CNC7H501 Optoisolators Overview The CNZ3731 series of optoisolators consist of a GaAs infrared LED which is optically coupled with a Si NPN Darlington phototransistor, and housed in a small DIL package. The series provides high I/O isolation voltage and high collector/emitter isolation voltage, as well as a high current transfer ratio (CTR). This opto isolator series also includes the two-channel CNC7C501 and the fourchannel CNZ3734, and A type of these models with increased collector to emitter breakdown voltage (VCEO > 350V). CNZ3731/CNC2S501 LED Mark 4.58±0.3 1 2 7.62±0.3 6.2±0.5 5.2 max. 0.5 min. 4 3 4-0.5±0.1 4-1.2±0.15 2.54±0.25 15˚ Unit : mm 2.54 min. 3.85±0.3 2.0 0.25 –0 +0.