LN55 - GaAs Infrared Light Emitting Diode

Name: LN55
SKU: LN55-60176

Panasonic Semiconductor

The LN55 by Panasonic Semiconductor is a GaAs Infrared Light Emitting Diode. Below is the official datasheet preview.

Datasheet Details

Part number	LN55
Manufacturer	Panasonic Semiconductor
File Size	38.03 KB
Description	GaAs Infrared Light Emitting Diode
Datasheet	LN55_PanasonicSemiconductor.pdf
Additional preview pages of the LN55 datasheet.

High-power output, high-efficiency : PO = 3.5 mW (typ. ) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.
Symbol PD IF.

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Published: Mar 22, 2005 |