Datasheet Specifications
- Part number
- LN55
- Manufacturer
- Panasonic Semiconductor
- File Size
- 38.03 KB
- Datasheet
- LN55_PanasonicSemiconductor.pdf
- Description
- GaAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN55 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems .
Features
* High-power output, high-efficiency : PO = 3.5 mW (typ. ) Suited for use with silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) High-speed modulation capability 4.5±0.3 2.8 1.8 1.0 4.8±0.3 2.4 2.4 12.8 min. 10.0 min. 2-0.98±0.2 2-0.45±0.15 0.45±0.15LN55 Distributors
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