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LN54 - GaAs Infrared Light Emitting Diode

Features

  • High-power output, high-efficiency : PO = 4.6 mW (typ. ) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ. ) Small size, thin side-view type package 2.9±0.25 1.2 1.7±0.2 0.9 0.8 12.8 min. 2.8 2-1.2±0.3 2-0.45±0.15 0.45±0.15 2.54 R0.8 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature.

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Datasheet Details

Part number LN54
Manufacturer Panasonic
File Size 44.28 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN54 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Light Emitting Diodes LN54 GaAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max. For optical control systems ø2.2 3.9±0.3 2.4 1.5 4.5±0.3 Features High-power output, high-efficiency : PO = 4.6 mW (typ.) Emitted light spectrum suited for silicon photodetectors Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small size, thin side-view type package 2.9±0.25 1.2 1.7±0.2 0.9 0.8 12.8 min. 2.8 2-1.2±0.3 2-0.45±0.15 0.45±0.15 2.54 R0.8 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * R0.
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