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LN52 - GaAs Infrared Light Emitting Diode

Features

  • High-power output, high-efficiency : PO = 6 mW (typ. ) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2.
  • 0.1 ø4.2 +0.1.
  • 0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1.
  • 1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power diss.

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Datasheet Details

Part number LN52
Manufacturer Panasonic
File Size 44.78 KB
Description GaAs Infrared Light Emitting Diode
Datasheet download datasheet LN52 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Infrared Light Emitting Diodes LN52 GaAs Infrared Light Emitting Diode Unit : mm For optical control systems Features High-power output, high-efficiency : PO = 6 mW (typ.) Wide directivity, matched for external optical systems : θ = 100 deg. Infrared light emission close to monochromatic light : λP = 950 nm Optimum for mesuring instruments and control equipments in conbination with silicon photodetectors ø5.35 +0.2 –0.1 ø4.2 +0.1 –0.2 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 2-ø0.45±0.05 0 1. 5 .1 +0 0.1 – 1. 0± 0. 1 45± 3˚ 2 1 Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * 2.54±0.
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