Datasheet Specifications
- Part number
- LN175
- Manufacturer
- Panasonic Semiconductor
- File Size
- 42.41 KB
- Datasheet
- LN175_PanasonicSemiconductor.pdf
- Description
- GaAlAs Infrared Light Emitting Diode
Description
Infrared Light Emitting Diodes LN175 GaAlAs Infrared Light Emitting Diode Unit : mm Not soldered 0.8 max.For optical control systems 1.5±0.2 Featu.
Features
* High-power output, high-efficiency : PO = 12 mW (typ. ) Emitted light spectrum suited for silicon photodetectors : λP = 900 nm (typ. ) Good radiant power output linearity with respect to input current Wide directivity : θ = 120 deg. (typ. ) 3.9±0.25 4.5±0.15 3.5±0.15 2.1±0.15 1.6±0.15 0.8±0.1 12.8 mLN175 Distributors
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