LN162S Datasheet - Panasonic Semiconductor

LN162S_PanasonicSemiconductor.pdf

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Datasheet Details

Part number:

LN162S

Manufacturer:

Panasonic Semiconductor

File Size:

39.03 KB

Description:

Gaas infrared light emitting diode.

LN162S, GaAs Infrared Light Emitting Diode

LN162S Features

* High-power output, high-efficiency : PO = 3.5 mW (typ.) Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Small ceramic package 3.75±0.3 2.0±0.2 12.5 min. ø3.0±0.15 ø0.3±0.05 ø0.45±0.05 0.9±0.15 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Anode 2: Cathode Parameter Powe

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LN162S GaAs Infrared Light Emitting Diode Panasonic Semiconductor

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