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Power MOSFETs
2SK3192
Silicon N-channel power MOSFET
Unit: mm
(0.7)
■ Features
• Avalanche energy capability guaranteed • High-speed switching • Low ON resistance Ron • No secondary breakdown
15.0±0.3 11.0±0.2
5.0±0.2 (3.2)
21.0±0.5
φ 3.2±0.1
15.0±0.2
■ Applications
• PDP • Switching mode regulator
16.2±0.5 (3.2) (2.3) Solder Dip
2.0±0.2 1.1±0.1
2.0±0.1 0.6±0.2
■ Absolute Maximum Ratings TC = 25°C
Parameter Drain-source surrender voltage Gate-source surrender voltage Drain current Peak drain current Avalanche energy capability * Power dissipation Ta = 25°C Channel temperature Storage temperature Tch Tstg Symbol VDSS VGSS ID IDP EAS PD Rating 250 ±30 ±30 ±120 925 100 3 150 −55 to +150 °C °C Unit V V A A mJ W
5.45±0.3 10.9±0.
K3192 Datasheet
