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Power F-MOS FETs
2SK2375
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
15.5±0.5
4.5
φ3.2±0.1
10.0
3.0±0.3
s Applications
q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply
5˚
26.5±0.5
5˚
23.4 22.0±0.5
2.0 1.2
5˚
18.6±0.5
5˚ 5˚
4.0 2.0±0.2 1.1±0.1
2.0
0.7±0.1
s Absolute Maximum Ratings (TC = 25°C)
Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 900 ±30 ±8 ±16 60 100 3 150 −55 to +150 Unit V V
5.45±0.3
3.3±0.3 0.7±0.1
5.45±0.3
5.5±0.
K2375 Datasheet
