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D2250 2SD2250

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Description

Power Transistors 2SD2250 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1490 φ 3.3±0.2 5.0±0.3 3.0 .

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Features

* q q q 6.0 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC

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