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D2139 2SD2139

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Description

Power Transistors 2SD2139 Silicon NPN triple diffusion planar type For high-current amplification ratio, power amplification Unit: mm s .

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Features

* 13.0±0.2 4.2±0.2 5.0±0.1 10.0±0.2 1.0 q q q 2.5±0.2 High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Allowing supply with the radial taping (TC=25˚C) Ratings 80 60 6 6 3 1 15 2 150
* 55 to +150 Unit V V V A A A W ˚C ˚C 90° 1.2±0.1 18.0±

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