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Power Transistors
2SB949, 2SB949A
Silicon PNP epitaxial planar type Darlington
0.7±0.1
For power amplification and switching Complementary to 2SD1275 and 2SD1275A
10.0±0.2 5.5±0.2
Unit: mm
4.2±0.2 2.7±0.2
4.2±0.2
s Features
16.7±0.3 7.5±0.2
q High foward current transfer ratio hFE q High-speed switching q Full-pack package which can be installed to the heat sink with
one screw
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SB949 base voltage 2SB949A
VCBO
–60 –80
V
14.0±0.5 Solder Dip 4.0
φ3.1±0.1
1.3±0.2 1.4±0.1
0.8±0.1
0.5 +0.2 –0.1
2.54±0.
B949 Datasheet
