2SK1103 - Silicon N-Channel Junction FET

Panasonic Semiconductor

Datasheet Details

Part number	2SK1103
Manufacturer	Panasonic Semiconductor
File Size	31.79 KB
Description	Silicon N-Channel Junction FET
Datasheet	2SK1103_PanasonicSemiconductor.pdf

2.9.
0.05 1.9±0.2 +0.2 q Low ON-resistance q Low-noise characteristics 0.95 1 0.95 3 0.4.
0.05 +0.1 s Absolute Maximum Ratings (Ta = 25°C) Parameter Gate to Drain voltage Drain current Gate current Allowable power dissipation Channel temperature Storage temperature Symbol VGDS ID IG PD Tch Tstg Ratings.
65 20 10 150 150.
55 to +150 Unit 0.8 2 1.45 V mA mA mW °C °C +0.2 1.1.
0.1 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini Type Pack.

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Published: Mar 30, 2005 |