2SK0301 - Silicon N-Channel Junction FET

Panasonic Semiconductor

Datasheet Details

Part number	2SK0301
Manufacturer	Panasonic Semiconductor
File Size	74.18 KB
Description	Silicon N-Channel Junction FET
Datasheet	2SK0301_PanasonicSemiconductor.pdf

13.5±0.5 G Low noies, high gain G High gate to drain voltage VGDO 0.45.
0.1 +0.2 0.45.
0.1 +0.2 I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Drain voltage Gate to Source voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO VGSO ID IG PD Tj Tstg Ratings 55.
55.
55 ±30 10 250 125.
55 to +125 Unit V V V mA mA mW °C °C 1.27 1.27 1 2 3 2.54±0.15 I.

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Published: Mar 30, 2005 |