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Transistor
2SD2259
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.9±0.1
0.15
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.5 4.5±0.1
0.7
4.0
s Features
q q q
0.65 max.
1.0 1.0
High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping.
0.2
Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
VCBO VCEO VEBO ICP IC PC* Tj Tstg 1cm2
20 20 15 1.5 0.7 1 150 –55 ~ +150
V V V A A W ˚C ˚C
1.2±0.1 0.65 max.
0.1 0.45+ – 0.05
Note: In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
2SD2259 Datasheet
