2SD1995 Datasheet (Panasonic Semiconductor)

2SD1995, Silicon NPN Transistor

Transistor 2SD1995 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9±0.1 1.05 2.5±0.1 (1.45) ±0.05 0.8 q q q q 0.45 0.05 +0.1 (Ta=25˚C) 1 2 3 0.45 0.05 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.5±0.5 2.5±0.5 +0.1 Ratin

2SD1995 Features

* 0.15 0.7 4.0 1 Transistor PC

* Ta 500 160 Ta=25˚C 140 400 100 25˚C Ta=75˚C 80

* 25˚C 2SD1995 IC

* VCE 120 VCE=10V IC

* VBE Collector power dissipation PC (mW) Collector current IC (mA) 120 100 80 60 40 20 IB=100µA 90µA 80µA 70µA 60µA 50µA 40µA 30µA 20µA 10µA