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Power Transistors
2SD1749, 2SD1749A
Silicon NPN triple diffusion planar type Darlington
For low-freauency power amplification Complementary to 2SB1179 and 2SB1179A
q q q
7.0±0.3 3.0±0.2 3.5±0.2
Unit: mm
High foward current transfer ratio hFE High-speed switching I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C)
Ratings 60 80 60 80 5 8 4 15 1.3 150 –55 to +150 Unit V
7.2±0.3
0.8±0.2
s Features
1.1±0.1
1.0±0.2 10.0 –0.
+0.3
0.85±0.1 0.4±0.1
0.75±0.1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1749 2SD1749A 2SD1749 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.3±0.2 4.6±0.4 1 2 3
1:Base 2:Collector 3:Emitter I Type Package
3.5±0.2 2.0±0.2
7.0±0.
2SD1749 Datasheet
