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Power Transistors
2SD1457, 2SD1457A
Silicon NPN triple diffusion planar type Darlington
For power amplification
15.0±0.3 11.0±0.2
Unit: mm
5.0±0.2 3.2
s Features
q q q
16.2±0.5 12.5 3.5 Solder Dip
High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 200 150 200 5 10 6 60 3 150 –55 to +150 Unit V
0.7
21.0±0.5 15.0±0.2
φ3.2±0.1
2.0±0.2
2.0±0.1 0.6±0.2
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to 2SD1457 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1.1±0.1 5.45±0.3 10.9±0.
2SD1457 Datasheet
