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Transistor
2SD1350, 2SD1350A
Silicon NPN triple diffusion planer type
For high breakdown voltage switching
s Features
q q q q q
Unit: mm
2.4±0.2 2.0±0.2 3.5±0.1
High collector to base voltage VCBO. High collector to emitter voltage VCEO. Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (Ta=25˚C)
Ratings 400 600 400 500 5 1 500 1 150 –55 ~ +150 1cm2 Unit V
6.9±0.1 1.5
0.4
2.5±0.1 1.0
1.0
1.5 R0.9 R0.9
1.0±0.1
0.85
Parameter Collector to base voltage Collector to 2SD1350 2SD1350A 2SD1350
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
0.55±0.1
1.25±0.05
0.45±0.
2SD1350A Datasheet
