2SD1330 Datasheet (Panasonic Semiconductor)

2SD1330, Silicon NPN Transistor

Transistor 2SD1330 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter 0.4 Unit: mm 6.9±0.1 1.5 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 2.5±0.1 1.0 1.0 q q q R 0.

q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ra

2SD1330 Features

* 7 Unit nA V V V 25 20 12 200 60 0.13 0.4 1.2 200 10 1.0

* 2 800 V V MHz pF Ω Pulse measurement FE1 Rank classification R 200 ~ 350 S 300 ~ 500 T 400 ~ 800 Measurement circuit 1kΩ Rank hFE1 IB=1mA f=1kHz V=0.3V VB VV VA Ron= VB !1000(Ω) VA

* VB 1 Transistor PC

* Ta