2SD1260A Datasheet (Panasonic Semiconductor) - Silicon NPN triple diffusion Transistor

2SD1260A, Silicon NPN triple diffusion Transistor

Power Transistors 2SB937, 2SB937A Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1260 and 2SD1260A 10.0±0.3 8.5±0.2 6.0±0.5 3.4±0.3 Unit: mm 1.0±0.1 q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.

of small electronic equipment.

(TC=25˚C) Ratings 60 80 60 80 5 4

2SD1260A Features

* 1.5max. 10.5min. 2.0 1.1max. 0.8±0.1 0.5max. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB937 2SB937A 2SB937 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.54±0.3 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter N Type Package Unit: mm 3.4±0.3 1.0±0.1 8.5±0.2 emitter