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2SD0875 - Silicon NPN Transistor

Features

  • s.
  • Large collector power dissipation PC.
  • High collector-emitter voltage (Base open) VCEO.
  • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.4±0.08 1.5±0.1 3˚ 0.4 max. 2.6±0.1 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25.
  • 0.20 2.5±0.1 1.0+0.1.
  • 0.2 3 2 0.5±0.08.
  • Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emit.

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www.DataSheet4U.net Transistors 2SD0875 (2SD875) Silicon NPN epitaxial planar type For low-frequency power amplification Complementary to 2SB0767 (2SB767) ■ Features • Large collector power dissipation PC • High collector-emitter voltage (Base open) VCEO • Mini power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1 0.4±0.08 1.5±0.1 3˚ 0.4 max. 2.6±0.1 Unit: mm 4.5±0.1 1.6±0.2 1.5±0.1 4.0+0.25 –0.20 2.5±0.1 1.0+0.1 –0.2 3 2 0.5±0.
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