2SC5912 - Silicon NPN triple diffusion mesa type Power Transistor

Name: 2SC5912
SKU: 2SC5912-558226

Panasonic Semiconductor

The 2SC5912 by Panasonic Semiconductor is a Silicon NPN triple diffusion mesa type Power Transistor. Below is the official datasheet preview.

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2SC5912 Silicon NPN triple diffusion mesa type Power Transistor by Panasonic Semiconductor - Datasheet Preview — Official preview page of the **2SC5912** Silicon NPN triple diffusion mesa type Power Transistor datasheet (Panasonic Semiconductor).

Datasheet Details

Part number	2SC5912
Manufacturer	Panasonic Semiconductor
File Size	202.79 KB
Description	Silicon NPN triple diffusion mesa type Power Transistor
Datasheet	2SC5912_PanasonicSemiconductor.pdf
Additional preview pages of the 2SC5912 datasheet.

2SC5912 Product details

Features

High breakdown voltage: VCBO ≥ 1 500 V.
Wide safe operation area.
Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚.
Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
Collector power dissipation Ta = 25°C Junction temperature Storage temp.

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Published: Oct 20, 2006 |