2SC5912 - Silicon NPN triple diffusion mesa type Power Transistor

Panasonic Semiconductor

Datasheet Details

Part number	2SC5912
Manufacturer	Panasonic Semiconductor
File Size	202.79 KB
Description	Silicon NPN triple diffusion mesa type Power Transistor
Datasheet	2SC5912_PanasonicSemiconductor.pdf

High breakdown voltage: VCBO ≥ 1 500 V.
Wide safe operation area.
Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚.
Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current.
Collector power dissipation Ta = 25°C Junction temperature Storage temp.

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Published: Oct 20, 2006 |