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Power Transistors
2SC5418
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
15.5±0.5
3.0±0.3
s Features
φ3.2±0.1
2.0 1.2 10.0 26.5±0.5
4.5
q High breakdown voltage, and high reliability through the use of a
5°
5°
glass passivation layer
q High-speed switching
23.4 22.0±0.5
q Wide area of safe operation (ASO)
5° 5°
4.0
/ s Absolute Maximum Ratings (TC=25˚C)
2.0±0.2
5°
1.1±0.1
e ) Parameter
Symbol
Ratings
Unit
2.0 18.6±0.5
c type Collector to base voltage
VCBO
1700
V
n d stage. tinued Collector to emitter voltage
VCES
3.3±0.3
0.7±0.1
1700
V
le n VCEO
600
V
a elifecyc disco Emitter to base voltage
VEBO
2.0 5.5±0.
2SC5418 Datasheet
