The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification Complementary to 2SA0885
φ 3.16±0.1
8.0+–00..15
Unit: mm
3.2±0.2
3.8±0.3 11.0±0.5
■ Features
3.05±0.1
• Low collector-emitter saturation voltage VCE(sat)
• Output of 3 W can be obtained by a complementary pair with 2SA0885
• TO-126B package which requires no insulation plate for installation to the heat sink
1.9±0.1 16.0±1.0
/ ■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
45
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
35
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
1
A
n u duct typed Peak collector current
ICP
1.
2SC1846 Datasheet
