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2SB767 - Silicon PNP Transistor

Features

  • q q q 4.5±0.1 1.6±0.2 1.5±0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings.
  • 80.
  • 80.
  • 5.
  • 1.
  • 0.5.
  • 2.6±0.1 0.4max. 45° 1.0.
  • 0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0.
  • 0.20 0.4±0.04 s Absolute Maximum Ratings Parameter Collector to base voltage.

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Datasheet Details

Part number 2SB767
Manufacturer Panasonic
File Size 38.80 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SB767 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transistor 2SB767 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD875 Unit: mm s Features q q q 4.5±0.1 1.6±0.2 1.5±0.1 Large collector power dissipation PC. High collector to emitter voltage VCEO. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. (Ta=25˚C) Ratings –80 –80 –5 –1 – 0.5 * 2.6±0.1 0.4max. 45° 1.0–0.2 +0.1 0.4±0.08 0.5±0.08 1.5±0.1 3.0±0.15 4.0–0.20 0.4±0.
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