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Transistors
2SB1322A
Silicon PNP epitaxial planer type
Unit: mm
For low-frequency power amplification Complementary to 2SD1994A I Features
• Allowing supply with the radial taping
6.9±0.1
1.05 2.5±0.1 ±0.05
(1.45) 0.8
0.15
0.7
4.0
0.65 max.
1.0 1.0
0.2
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
Rating −60 −50 −5 −1.5 −1 1 150 −55 to +150
Unit V V V A A W °C °C
1
2
3
0.45−0.05
+0.1
I Absolute Maximum Ratings Ta = 25°C
0.45−0.05 2.5±0.5 2.5±0.5
+0.1
Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.