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2SB1322A - Silicon PNP Transistor

Features

  • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation.
  • Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating.
  • 60.
  • 50.
  • 5.
  • 1.5.
  • 1 1 150.
  • 55 to +150 Unit V V V A A W °C °C 1 2.

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Transistors 2SB1322A Silicon PNP epitaxial planer type Unit: mm For low-frequency power amplification Complementary to 2SD1994A I Features • Allowing supply with the radial taping 6.9±0.1 1.05 2.5±0.1 ±0.05 (1.45) 0.8 0.15 0.7 4.0 0.65 max. 1.0 1.0 0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating −60 −50 −5 −1.5 −1 1 150 −55 to +150 Unit V V V A A W °C °C 1 2 3 0.45−0.05 +0.1 I Absolute Maximum Ratings Ta = 25°C 0.45−0.05 2.5±0.5 2.5±0.5 +0.1 Note) In addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available.
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