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Transistors
2SB0819 (2SB819)
Silicon PNP epitaxial planar type
For low-frequency output amplification Complementary to 2SD1051
(0.4)
Unit: mm
6.9±0.1 (1.5) (1.5)
3.5±0.1
2.5±0.1 (1.0)
(1.0) 2.0±0.2 2.4±0.2
1.0±0.1
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature
*
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating −50 −40 −5 −1.5 −3 1 150 −55 to +150
Unit V V V A A W °C °C
3 (2.5) 2 (2.5) 1
1.25±0.05
■ Absolute Maximum Ratings Ta = 25°C
(0.85) 0.55±0.1
0.45±0.
2SB0819 Datasheet
