Satisfactory linearity of forward current transfer ratio hFE.
High transition frequency (fT).
Full-pack package which can be installed to the heat sink with one screw. 15.0±0.5
9.9±0.3
4.6±0.2 2.9±0.2
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15.
Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current.
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Power Transistors
2SA2140
Silicon PNP epitaxial planar type
Unit: mm
3.0±0.5
For power amplification For TV VM circuit ■ Features
• Satisfactory linearity of forward current transfer ratio hFE • High transition frequency (fT) • Full-pack package which can be installed to the heat sink with one screw.
15.0±0.5
9.9±0.3
4.6±0.2 2.9±0.2
φ 3.2±0.1
13.7±0.2 4.2±0.2 Solder Dip
1.4±0.2 1.6±0.2 0.8±0.1
2.6±0.1
0.55±0.15
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating −180 −180 −6 −1.5 −3 20 2.
2SA2140 Datasheet
