2SA1310 - Silicon NPN epitaxial planer type Transistor
Panasonic
Features
q q q q
Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25˚C)
Ratings.
60.
55.
7.
200.
100 300 150.
55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 marking 1 2 3
+0.2 0.45.
0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power.
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Transistor
2SA1310
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification Complementary to 2SC3312
Unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q q q q
Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25˚C)
Ratings –60 –55 –7 –200 –100 300 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
1:Emitter 2:Collector 3:Base
1.27 1.27 marking 1 2 3
+0.2 0.45–0.1
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
2.54±0.
2SA1310 Datasheet
