2SA1124 Datasheet - Panasonic Semiconductor

2SA1124 Silicon NPN epitaxial planer type Transistor

Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.9± 0.2 Unit: mm 4.9± 0.2 q q q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 150 150 5 <.

2SA1124 Features

* 0.45

* 0.1 +0.2 V mA mA W ˚C ˚C 1 2 3 1:Emitter 2:Collector 3:Base EIAJ:SC

* 51 TO

* 92L Package s Electrical Characteristics Parameter Collector cutoff current Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturati

2SA1124 Datasheet (36.73 KB)