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PJQ5478 - 100V N-Channel Enhancement Mode MOSFET

Features

  • RDS(ON) , VGS@10V, ID@30A.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PPJQ5478 100V N-Channel Enhancement Mode MOSFET Voltage 100 V Current 60A DFN5060-8L Features  RDS(ON) , VGS@10V, ID@30A<12mΩ  Advanced Trench Process Technology  High density cell design for ultra low on-resistance  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data  Case: DFN5060-8L Package  Terminals: Solderable per MIL-STD-750, Method 2026  Approx. Weight: 0.0028 ounces, 0.
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