MMBT2369A Datasheet - Pan Jit International

MMBT2369A NPN GENERAL PURPOSE SWITCHING TRANSISTOR

MMBT2369A Features

* NPN epitaxial silicon, planar design

* Collector-emitter voltage VCE = 15V

* Collector current IC = 200mA

* In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA

* Case: SOT-23, Plastic

* Terminals: Solderable per MIL-STD-750, Method 2026

Datasheet Details

MMBT2369A

Pan Jit International

165.73 KB

Npn general purpose switching transistor.

📁 Related Datasheet

MMBT2369 NPN General Purpose Amplifier (GME)

MMBT2369 Surface Mount Si-Epi-Planar Switching Transistors (Diotec)

MMBT2369 NPN Switching Transistor (Fairchild)

MMBT2369 NPN Silicon Switching Transistor (SEMTECH)

MMBT2369-G GENERAL PURPOSE TRANSISTORS (Comchip Technology)

MMBT2369A NPN Switching Transistor (Fairchild)

MMBT2369A NPN General Purpose Amplifier (GME)

MMBT2369A NPN Silicon Switching Transistor (SEMTECH)

TAGS

MMBT2369A Distributor