Description
The HL7851G is a high-power 0.78 µm band GaAlAs laser diode with a multi-quantum well (MQW) structure.
Features
- Visible light output: λp = 785 nm Typ.
- Small beam ellipticity: 9.5:23 www. DataSheet4U. com.
- High output power: 50 mW (CW).
- Built-in monitor photodiode
Package Type.
- HL7851G: G2
Internal Circuit
1 3
PD
LD
2
Absolute Maximum Ratings
(TC = 25°C)
Item Optical output power Pulse optical output power LD reverse voltage PD reverse voltage Operating temperature Symbol PO PO(pulse) VR(LD) VR(PD) Topr Ratings 50 60.
- 2 30.
- 10 to +60.
- 4.
HL7851G_Opnext.pdf
