F0118J - GaAs Infrared Emitting Diode

Product Overview

OSRAM

Datasheet Details

Part number	F0118J
Manufacturer	OSRAM
File Size	58.94 KB
Description	GaAs Infrared Emitting Diode
Datasheet	F0118J Datasheet
Additional preview pages of the F0118J datasheet.

Product details

Description

Infrarot emittierender Chip, Oberseite Anodenanschluss Rückseite AuGe Eutektikum Infrared emitting die, top side anode connection Backside AuGe eutectic alloy 2002-02-21 1 F 0118J Elektrische Werte (gemessen auf TO18-Bodenplatte ohne Verguss, TA = 25 °C) Electrical values (measured on TO18 header without resin, TA = 25 °C) Bezeichnung Parameter Wellenlänge der Strahlung Wavelength at peak emission IF = 10 mA Spektrale Bandbreite bei 50% von Imax, IF = 10 mA Spectral bandwidth at 50% of Imax S

Features

Typ. total radiant power: 22 mW @ 100 mA in Topled® package.
Chip size 300 x 300 µm2.
Very highly efficient GaAlAs LED.
High reliability.
High pulse handling capability.
Good spectral match to silicon photodetectors.
Frontside metallization: aluminum Backside metallization: gold alloy.

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Other Datasheets by OSRAM

F0118G - GaAs Infrared Emitting Diode

Published: Apr 14, 2005 |