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HCT7000MTXV - N-Channel Enhancement Mode MOS Transistor

Download the HCT7000MTXV datasheet PDF. This datasheet also covers the HCT7000 variant, as both devices belong to the same n-channel enhancement mode mos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package.

Electrical characteristics are similar to those of the JEDEC 2N7000.

Features

  • 200mA ID.
  • Ultra small surface mount package.
  • RDS(ON) < 5Ω.
  • Pin-out compatible with most SOT23.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HCT7000_ETC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HCT7000MTXV
Manufacturer OPTEK
File Size 241.57 KB
Description N-Channel Enhancement Mode MOS Transistor
Datasheet download datasheet HCT7000MTXV Datasheet

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Other Datasheets by OPTEK

Part Number Description
HCT7000MTX N-Channel Enhancement Mode MOS Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Product Bulletin HCT7000M January 1996 N-Channel Enhancement Mode MOS Transistor Type HCT7000M, HCT7000MTX, HCT7000MTXV Features • 200mA ID • Ultra small surface mount package • RDS(ON) < 5Ω • Pin-out compatible with most SOT23 MOSFETS Description The HCT7000M is a high performance enhancement mode N-channel MOS transistor chip packaged in the ultra small 3 pin ceramic LCC package. Electrical characteristics are similar to those of the JEDEC 2N7000. The pinout and footprint matches that of most enhancement mode MOS transistors built in SOT23 plastic packages. Absolute Maximum Ratings Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 V Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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